The layers of copper chalcogenides, which were formed on the surface of semihydrophilic polymer—polyamide 6 (PA) using monoselenopentathionicH2SeS4O6and monotelluropentathionicH2TeS4O6acids as precursors of chalcogens, were characterized. Fourier transform infrared (FT-IR) and UV spectroscopy were used to monitor the effect of chalcogens on the changes in structure of PA corresponding to the concentration of the precursor's solution and an exposure time. The IR spectra of modified PA were completely different from that of the initial PA. Further interaction of chalcogenized PA with copper (II/I) salt solution leads to the formation ofCuxS,CuxSe,CuxTe,and mixed –CuxS–CuySeandCuxS–CuyTelayers which have different electric transport properties. The surface properties of PA after treatment are studied using AFM and XRD. The electrical resistances of layers with various composition formed over a wide concentration range 0.01–0.5mol⋅dm−3of precursor's solution were measured. Variation in the conductivity of layers of Cu–Se–S and Cu–Te–S on the surface of PA shows an evident increase with the increasing of the mass fraction of selenium or tellurium.

The preparative conditions were optimized to get chalcogens layers on the polymer − polyamide PA surface by sorption at room temperature using sodium telluropentathionate, Na 2 TeS 4 O 6 . Further interaction of chalcogenized dielectric with copper's (I/II) salt solution leads to the formation of mixed Cu x S y -Cu x Te y layers. Optical, electrical and surface characteristics of the layers are highly controlled by the deposition parameters. The stoichiometry of these layers was established by UV-Visible and AA spectrometry. Optical absorption (transmittance) experiments show the samples are of high optical quality. The band gaps of thin films were obtained from their optical absorption spectra, which were found in the range of 1.44-2.97 eV. XRD was used in combination with AFM to characterize chalcogenides layers' structural features. XRD analysis confirmed the formation of mixed copper chalcogenides' layers in the surface of PA with binary phases such as Cu

Mixed cadmium tellurides–cadmium sulfide thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as a precursor of tellurium and sulfur. A low-temperature, nontoxic, and cost-effective SILAR method was applied. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through the consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62−) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models were the best fit to quantify an uptake of chalcogens and cadmium on PA 6. The effects of chalcogens and Cd on the structure and optical properties of PA 6 were characterized using UV-Vis and IR spectra. The clear changes of these properties depended on the concentration and exposure time in the precursor solutions. Fourier transform infrared spectroscopy and ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogen species on the changes in structure of polyamide 6 films, depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical bandgap energy of the formed layers was found to be in the order of 1.52–2.36 eV. Studies by scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is approximately 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.

Mixed cadmium tellurides – cadmium sulfides thin layers were formed on the polyamide PA 6. Monotelluropentathionic acid (H2TeS4O6) was used as precursor of tellurium and sulfur. We applied a low-temperature, nontoxic and cost-effective SILAR method. Cadmium telluride (CdTe) and sulfide (CdS) layers were formed through consecutive reactions of sorbed/diffused chalcogens species from telluropentathionate anion (TeS4O62–) with functional groups of polyamide and alkaline cadmium sulfate. The pseudo-second-order rate and Elovich kinetic models best fitted to quantify an uptake of chalcogens and cadmium on PA6. The effects of chalcogens and Cd on the structure and optical properties of PA6 were characterized using UV/Vis and IR spectra. The clear changes of these properties found in dependence on the concentration and exposure time in precursor's solutions. Fourier transform infrared spectroscopy and an ultraviolet-visible spectroscopy were applied in order to evaluate the effect of the chalcogens having particles on the changes in structure of polyamide 6 films depending on the exposure time in the solution of the chalcogens precursor and its concentration. The optical band gap energy of formed layers was found to be in the order of 1.52–2.36 eV. Studies of scanning electron microscopy and atomic force microscopy reveal that the diameter of the average grain is about 30 nm. The grains are conical in shape and unevenly distributed all over the surface of the substrate.