Si nanocrystals with face-centered-cubic (fcc) structure were fabricated using common sputtering technique, but applying bias on the substrate, the thermodynamic calculation indicates that the bombardment of Ar+ ions arising from the bias should be responsible for the crystallization and phase transition of Si nanocrystals. The silica films containing fcc-Si nanocrystals give strong blue and ultraviolet light emissions, which suggest that the band structure of Si material could be modified by changing the crystal structure.

No abstract

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

No abstract

No abstract