The Schottky contact on GaN HEMT power devices is a key element for high power performance and its long term reliability behavior. Up to now such GaN devices are still suffering very often by a leakage current increase during operation resulting in deteriorated transistor behavior. One reason for this problem is owing to insufficiently stable Schottky contacts based on NiAu metalisation. We analysed GaN HEMTs with different aging behaviors by means of HR‐TEM and EDX investigations. It could be shown that on transistors with increasing leakage current Au was found directly on the Schottky interface which may be responsible for the increase of the leakage current. Furthermore, there are strong indications that such Au is diffusing via the gate foot side wall Ni‐SiN interface towards the Schottky barrier. It is proposed that an additional metallic diffusion barrier may solve this aging problem. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III-V technology and the intensive support and collaboration with partners and European research institutes, UMS has developed the capability to produce state-of-the-art GaN devices and circuits. The present paper will summarize the current status achieved and illustrate it with a few representative examples. Aspects covering material, devices, and circuits will be addressed.

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