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The electron, hole, and exciton g factors and diamagnetic coefficients have been calculated using envelopefunction theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear connection is established between the electron g factor and the amplitude of those valence-state envelope functions that possess nonzero orbital momentum associated with the envelope function. The dependence of the exciton diamagnetic coefficients on the quantum dot height is found to correlate with the energy dependence of the effective mass. Calculated exciton g factor and diamagnetic coefficients, constructed from the values associated with the electron and hole constituents of the exciton, match experimental data well, however including the Coulomb interaction between the electron and hole states improves the agreement. Remote-band contributions to the valence-band electronic structure, included perturbatively, reduce the agreement between theory and experiment.

Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly varying within the quantum dot, and are peaked roughly halfway between the dot center and edge. Thus the spatial structure of the spin contribution to the magnetic moment (which is peaked at the dot center) differs greatly from the spatial structure of the orbital contribution. Even when the spin and orbital magnetic moments cancel (for g = 0) the spin can interact strongly with local magnetic fields, e.g. from other spins, which has implications for spin lifetimes and spin manipulation.

Scanning tunneling spectroscopy was performed at low temperature on buried manganese ͑Mn͒ acceptors below the ͑110͒ surface of gallium arsenide. The main Mn-induced features consisted of a number of dI / dV peaks in the band gap of the host material. The peaks in the band gap are followed by negative differential conductivity, which can be understood in terms of an energy-filter mechanism. The spectroscopic features detected on the Mn atoms clearly depend on the depth of the addressed acceptor below the surface. Combining the depth dependence of the positions of the Mn-induced peaks and using the energy-filter model to explain the negative resistance qualitatively proves that the binding energy of the hole bound to the Mn atom increases for Mn acceptors closer to the surface.

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