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In this paper, we describe a monolithic microwave active inductor to be implanted in tunable filters. The novel active inductor operating at 22 GHz has been achieved using 0.2 gm GaAs P-Hemt technology [1]. An unloaded resonator quality factor up to 2500 has been measured at 21.96 GHz. The inductance value and Q factor can be voltage tuned through the gate and drain biasing. Several types of MIIIC filters around 22 GHz were designed, realized and fully characterized in K-band. The best performances obtained for a band-pass filter operating at 21.98 GHz are a better bandwidth of 0.75 GHz than for a passive filter and a noise figure of 1.95 dB. Comparisons between simulation and measurements are reported.

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A complete calculation of free carriers absorption and of connected conductivity in p-type silicon is performed including both acoustic and optical phonon and ionized impurity scattering, and direct transitions between the valence bands. The interband transition probability is determined for any directionof the wavevector taking the warped character of the valence bands into account.

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