The distribution of radial energy deposition around the track of carbon, aluminum, and iron ions with energy range from 10 MeV to 10 GeV inside silicon was calculated. A simple and direct approach was developed utilizing a corrected semianalytical model. The results of the present work agree very well with Monte Carlo calculations as well as stopping power tables.

Single-event energy distributions were measured in a 1.3-micron-diameter site as a function of radial distance from the trajectory of high-energy iron ions having an energy of about 600 MeV/amu. It was found that beyond distances of a few micrometers the average lineal energy of the (mostly single) secondary electrons (delta rays) is of the order of 3 keV/micron. This is similar to the value found in a medium irradiated by 170-keV photons. The frequency-mean specific energy for delta rays occurring at large distances from the path of the primary ion exceeds the calculated (radial) absorbed dose by two orders of magnitude.

A comparison of single-event transients (SETs) from heavy-ion and pulsed-laser irradiation of the LM124 operational amplifier shows good agreement for different voltage configurations. The agreement is illustrated by comparing both individual transient shapes and plots of transient amplitude versus width.

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This paper describes a complete simulation approach to investigating the physics of heayy-ion charge generation and collection during a single event transient in a PN diode. The simulations explore the effects of Werent ion track models, applied biases, background dopings, and LET on the transient responses of a PN diode. The simulation results show that ion track structure and charge collection via diffusiondominated processes play important roles in determining device transient responses. The simulations show no evidence of rapid charge collection in excess of that deposited in the device depletion region in typical funneling time frames (i.e., by time to peak current or in less than 500 ps). Further, the simulations clearly show that the device transient responses are not simple functions of the ion's incident LET. The simulation results imply that future studies and experiments should consider the effects of ion track structure in addition to LET and extend transient charge collection times tb insure that reported charge collection efficiencies include diffusiondominated collection processes.