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Decapsulation of silver wire bonded packages with known techniques often results in damaged silver wires. The chemical properties of silver and silver compounds make silver bond wire inherently susceptible to etching damage by acid, conventional plasma, and oxygen-based Microwave Induced Plasma (MIP). In this paper we solve this problem by developing a specific decapsulation chemistry, based on a hydrogen-containing MIP, for artifact-free decapsulation of silver wire bonded packages.

When it comes to complex system-in-package (SiP) with a wide spectrum of materials and packaging structures integrated into a single module, decapsulation and the following failure analysis become extremely complex. Previous work published by the authors' group has demonstrated that a halogen-free microwave induced plasma (MIP) system has great advantage compared to the conventional techniques mentioned before. This paper explores the applicability of the halogen-free MIP on the most complex SiP module decapsulation. Applications in special structures in SiP include 3D stacked-die, gallium arsenide, surface acoustic wave (SAW) and bulk acoustic wave filters, and copper re-distribution layer. The halogen-free MIP decapsulation process can expose and preserve all the dies and passive components as well as the original failure sites, which proves to be key to ensuring a high success rate in SiP failure analysis.