Room temperature continuous-wave operation of InAsSb quantum-dot distributed feedback lasers Appl. Phys. Lett. 87, 203102 (2005); 10.1063/1.2130527 Room-temperature continuous-wave operation of InAsSb quantum-dot lasers near 2 μm based on (001) InP substrate Appl.

Negative differential resistance associated with hot phonons J. Appl. Phys. 112, 063707 (2012) Photoluminescence properties and high resolution x-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method J. Appl. Phys. 112, 063109 (2012) Optical properties of InGaPN epilayer with low nitrogen content grown by molecular beam epitaxy J. Appl. Phys. 112, 063507 (2012) Residual compressive stress induced infrared-absorption frequency shift of hexagonal boron nitride in cubic boron nitride films prepared by plasma-enhanced chemical vapor deposition

We report a demonstration of very long wavelength infrared detectors based on InAs/GaSb superlattices operating at T=80 K. Detector structures with excellent material quality were grown on an optimized GaSb buffer layer on GaAs semi-insulating substrates. Photoconductive devices with 50% cutoff wavelength of λc=17 μm showed a peak responsivity of about 100 mA/W at T=80 K. Devices with 50% cutoff wavelengths up to λc=22 μm were demonstrated at this temperature. Good uniformity was obtained over large areas even for the devices with very long cutoff wavelengths.