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This paper reports the first, near theoretical limit breakdown voltage (1,750V) 4H-SiC BJTs with both high DC current gain(24.8) and low specific on-resistance (8.4mΩ⋅cm 2 at 50A/cm 2 and 12mΩ⋅cm 2 at 356A/cm 2 ) based on a drift layer of only 12µm, doped to 8.5x10 15 cm -3 . The high performance is achieved through the use of an optimum single-step junction termination extension (JTE), Al-free base Ohmic contact and wet-oxygen low-temperature re-oxidation annealing. Detailed processing conditions are reported. Room temperature and high temperature currentvoltage characteristics are also reported.

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