The efficacy of hetero-interfaces as sinks for point defects in Cu was characterized using local measurements of tracer-impurity, radiation-enhanced diffusion (RED). The measurements were performed as a function of irradiation temperature and Cu thickness in multilayer samples, with the results being compared to steady-state kinetic rate equations to determine sink strengths. Cu-Nb Kurdjumov-Sachs (K-S) interfaces are found to be nearly ideal sinks for point defects, whereas Cu-Ni (111) hetero-epitaxial interfaces are poor sinks; Cu-V K-S interfaces are intermediate. Quantitative analysis of the RED data also yields the defect production efficiency for freely migrating defects in Cu, which is on the order of 1% for MeV Kr irradiation.

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