We determine the spin susceptibility in a two-dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2x10(9) cm(-2) to 4x10(10) cm(-2). Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.
A new CMOS cirrrent;feedback opmational-amplger (CFOA) with a novel owchip current-mode input offset voltage compensation circuit is presented. The offset voltage is reduced to less than 1 mlr by varying the bias currents of the amplijkrS input bufser as a function of the mismatch between the NMOS and PMOS 5 ' s (Vi, and Vi$. The proposed compensalion technique is suitable for both CMOS and BJT CFOA designs without degrading their high-Pequency performance. As well, it is irrespective of process and temperature parame,ters because of its fully symmetrical architecture. Results of HSPICE simulation show that a GB W of around 100 MHz and a supply current of around 300 .uA are achievable in a CMOS CFOA.
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