We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (µLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to −100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between µLED arrays and Si CMOS (complementary metal–oxide–semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors.

Micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN µLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a highresolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps.