The pair-induced quenching (PIQ) effect in a highly doped bismuth oxide-based erbium-doped fiber amplifier (EDFA) was theoretically and experimentally investigated. In the theoretical investigation, the bismuth oxide-based EDFA was modeled as a 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative up-conversion, pump excited state absorption (ESA), and signal ESA. The relative number of paired ions in a highly doped bismuth oxide EDF was estimated to be ~6.02%, determined by a comparison between the theoretical and the experimentally measured gain values. The impacts of the PIQ on the gain and the noise figure were also investigated.

A complete modeling of erbium-doped Bismuth-oxide fibers with a high doping concentration is presented. A 6-level amplifier system that incorporated clustering-induced concentration quenching, cooperative upconversion, pump excited state absorption (ESA), and signal ESA, was adopted for the modeling. The accuracy of the modeling was verified by comparing the calculated gain and noise figure with experimentally obtained ones. , Fiber Raman Amplifier (FRA) [2] 와 기존의 EDFA를 결합 시켜 C-, L-band 대역의 신호이득을 동시에 줄 수 있는Hybrid 증폭에 대한 연구가 활발히 진행되었다 [3] . 또한 하나 의 광증폭기로 C-, L-band 동시에 신호이득을 줄 수 있는 새 로운 Host 물질로 이루어진 광증폭기에 대한 연구도 활발히 진행되어왔다. 더 넓은 증폭대역을 얻기 위해 높은 굴절률을 가진 Host 물질을 사용해야 한다고 보고된 바 있으며 . 그 중 Bismuth 기반 어븀첨가 광섬유