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This paper provides statistical analysis on real data taken from state-of-the-art MLC NAND flash memory cells. The analysis allows separation of different sources affecting the output values of the cell. Interference due to floating gate coupling is isolated. The effect of noise and interference on the victim cell after repeated program/erase cycles as well as baking is investigated.

This paper discusses a technique for analyzing real data from flash memory cells. The goal is to identify and isolate various sources that cause the shifts and variations of the read values with respect to the intended write values. The analysis reveals how the neighboring cells interfere with the victim cell. Using the proposed analysis technique, the contribution of a specified set of neighboring cells towards the random read variation of the victim cell can also be quantified.

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This paper focuses on two-dimensional (2D) softinput soft-output (SISO) equalization to mitigate intersymbol interference (ISI) among symbols that arise within a 2D array of data cells. The proposed method is based on arranging multiple component equalizers to exchange soft information with one another to enhance decision quality in an iterative manner. The component equalizers are simple one-dimensional linear equalizers running in different directions and do not perform well enough individually in the challenging 2D ISI environment, but working together, they consistently reach high-quality decisions. Performance comparison is made with the reduced-state trellisbased equalizers as well as the conceptually straightforward 2D linear equalizers. The results indicate excellent complexity/performance trade-off options for the proposed scheme.