A continuum model of point-defects evolution during irradiation of a multilayer composite material is presented in this work. Nonstationary balance equations are used to describe production, recombination, transport, and annihilation, or removal, of vacancies and interstitials in a --three-layer system ( = Cu and = Nb, V, or Ni). In addition, transport and trapping of point-defects at interfaces are taken into account. Numerical investigation on similarities and differences between Cu/Nb, Cu/V, and Cu/Ni systems is also performed. A general comparison of model results reveals that average vacancy concentration is typically higher than SIA one in both layers for all the systems investigated. This is a consequence of the higher diffusion rate of SIAs with respect to vacancies. Stationary state is reached without saturating interface point-defect traps by all systems but Cu/Ni for the case of SIAs. It can be also seen that Cu/Nb and Cu/V systems have a very similar behavior regarding point-defect temporal evolution in copper (layer ), while higher SIA concentration at steady state is shown therein by the Cu/Ni structure. Moreover, Cu/V system displays the lower stationary vacancy concentration in layer .

Atomistic simulations have revealed an unconventional behavior of point defects at interfaces found in multilayer composites synthesized by physical vapor deposition but the observed mechanisms that involve point-defect annihilation are subject to time-scale limitations. So, a mathematical model that describes long-term evolution of point defects in such materials under irradiation is presented in this work.Firstly, the effect of interface point-defect trapping and recombination mechanisms on point-defect concentrations has been studied. In addition, the effect of interface self-interstitial atoms loading, which has been seen during collision cascades, and constitutional vacancies has been studied too. Two interface configurations have been considered between metals in a β-α-β three-layer system (α = Cu and β = Nb, or V), KS min and KS 1 . These interfaces correspond to ground-state and defect-free KS structures respectively.The respond to irradiation of the systems investigated here, Cu/Nb and Cu/V, depends on both, interface characteristics and bulk properties. Nonetheless, the influence of the properties of one metal in the pointdefect evolution of the other metal is only effective if there are constitutional vacancies at the interface, i.e., for KS min . Especial attention has been paid to the behavior of the same metal (Cu) when it is surrounded by diverse metals (Nb, or V) with the aim of comparing quantitatively our model predictions with experimental results reported elsewhere. The lower concentration of vacancies in Cu layer of Cu/Nb system at steady state is due to the low mobility of vacancies in niobium.