Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can be observed for such monolayers although only for materials of sufficient crystalline quality and so far mostly available in the form of micrometer-sized flakes. A further significant improvement of optical and electrical properties can be achieved by transferring the TMD on hexagonal boron nitride (hBN). To exploit the full potential of TMDs in future applications, epitaxial techniques have to be developed that not only allow the growth of large-scale, highquality TMD monolayers but also allow the growth to be performed directly on large-scale epitaxial hBN. In this work, we address this problem and demonstrate that MoSe 2 of high optical quality can be directly grown on epitaxial hBN on an entire 2 in. wafer. We developed a combined growth theme for which hBN is first synthesized at high temperature by metal organic vapor phase epitaxy (MOVPE) and as a second step MoSe 2 is deposited on top by molecular beam epitaxy (MBE) at much lower temperatures. We show that this structure exhibits excellent optical properties, manifested by narrow excitonic lines in the photoluminescence spectra. Moreover, the material is homogeneous on the area of the whole 2 in. wafer with only ±0.14 meV deviation of excitonic energy. Our mixed growth technique may guide the way for future large-scale production of high quality TMD/hBN heterostructures.

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The article presents the legal basis for the independence of foster care charges and the analysis of statistical information on independence in Warsaw in 2012–2019, in the period after the introduction of the Act on supporting the family and foster care. Part of the research carried out in a group of 52 young adults leaving foster families and care and educational facilities in Warsaw, describing their opinions on the reasons for which they were placed in foster care, their contacts with their parents and relations with their relatives, was also discussed.

The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work, we investigate hBN layers grown by Metal Organic Vapor Phase Epitaxy (MOVPE) using Fourier-transform Infrared (FTIR) spectroscopy in the temperature range of 160-540 K. Our measurements reveal strong differences in the character of layer-substrate interaction for as-grown and delaminated epitaxial layers. A much weaker interaction of as-grown layers is explained by wrinkles formation that reduces strain at the layer-substrate interface, which for layers transferred to other substrates occurs only in a limited temperature range. The most striking result is the observation of a giant increase in the E1u phonon energy of up to ∼ 6 cm−1 in a narrow temperature range. We show that the amplitude and temperature range of the anomaly is strongly modified by UV light illumination. The observed giant effect is explained in terms of strain generation resulting from charge redistribution between shallow traps and different defects, which can be interpreted as a result of strong electron-phonon coupling in hBN. The observed narrow temperature range of the anomaly indicates that the effect may be further enhanced for example by electrostrictive effects, expected for sp2 boron nitride.

The substrate is one of the key components that determines the quality of the epitaxial layers. However, the implications of growing two-dimensional layers on three-dimensional bulk substrates have not yet been fully understood, and these implications need to be studied for different combinations of materials and substrates. Here, we present a study that addresses the influence of the sapphire substrate off-cut angle on the final growth of two-dimensional layers of hexagonal boron nitride (h-BN) by metal-organic vapor phase epitaxy (MOVPE). A two-step wafer-scale process was used in one epitaxial MOVPE procedure. The main process starts with a self-limiting continuous growth of a BN buffer followed by flow-modulated epitaxy in the second step, and is used to study substrates with different off-cuts angles, pre-growth nitridation steps, and post-growth annealing. An initial nitridation step at the growth temperature allowed for the growth of an AlN sublayer. This layer is shown to smooth out the underlying sapphire and establishes an “effective” sapphire/AlN substrate. This step is also responsible for enforcing a specific growth of the BN layer in a crystallographic orientation, which is shown to strongly deviate from the substrate for off-cut angles larger than 0.3°. A substrate with off-cut angle of 1° clearly yields the highest quality of h-BN layers as evidenced by the lowest amount of debris on the surface, most intense x-ray diffraction signal, minimal Raman phonon linewidth and thinnest amorphous BN (a-BN) at the interface with the effective substrate. Our study shows that the off-cut angles of sapphire substrates strongly influence the final epitaxial h-BN, clearly indicating the importance of optimal substrate preparation for the growth of two-dimensional BN layers. Post-growth annealing in N2 atmosphere at 800 °C improves the top surface morphology of the final stack, as well as suppresses further the presence of a-BN.