The current emphasis on studying why people with severe mental illness are potentially violent has overlooked the effect of violence committed against these individuals. To balance the understanding of the person-in-environment conceptualization of severe mental illness, the nature, scope, and effect of crime and victimization should be examined as part of the context in which these individuals live and function. The study reported in this article examined the nature and scope of victimization as experienced by 234 individuals with a diagnosed major mental illness; what types of victimization experiences occurred during their lifetime; what specific victimization experiences these individuals identified as the most troubling; who the perpetrators for these specific victimization experiences were; and what influence demographic and clinical characteristics played in influencing the risk of victimization among this group. The study indicates that social workers should better assess for experiences of victimization among people with mental illness and better understand the effect of such experiences on the individual's symptoms and day-to-day functioning.

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The Hall coefficient and electrical resistivity have been measured on single-crystal specimens of «-type Sn02 between 80 and 900°K. Data were obtained on samples in the "as grown" state, as well as on crystals which were thermally equilibrated in oxygen. A single-donor-level analysis on heat-treated crystals with donor concentrations (ND) between 1X10 16 and 5X10 17 cm" 3 resulted in values of the "density-of-states" effective mass m (JNr) =0.22m. Values of the donor ionization energy ED were found to decrease with increasing ND. At infinite dilution ED has an estimated value of 0.15 eV. Room-temperature thermoelectric-power measurements resulted in calculated values of m {N) between 0.12 and 0.18m. Antimony-doped crystals of Sn02 with ND>6X10 18 cm -8 appeared to be degenerate above 80°K. The low-temperature Hall mobility was found to decrease with decreasing donor concentration. A qualitative treatment of the data appears consistent with the hypothesis of impurity-level transport. Mobility above 300°K was analyzed by considering polar-optical modes of vibration as being the dominant lattice scattering mechanism. Both the perturbation and intermediate-coupling theories were in reasonable agreement with experimental values using a Debye temperature ®r^500°K.

Single crystals of stannic oxide up to 30×4×2 mm have been prepared by a high temperature vapor deposition technique. Using high purity SnO2 powder, crystallization and growth were studied under both neutral and oxidizing conditions. Neutral carrier gases, with the exception of helium, encouraged the formation of voids and inclusions. However, the use of a helium-oxygen system was found to eliminate these defects. An explanation is offered for this behavior. Three distinct variations in the crystalline habit of SnO2 have been observed, apparently dependent upon the temperature at which growth occurred.