Polycrystalline lead oxide (PbO) film is an excellent candidate material for a direct conversion X-ray detector. However, the thick-bulky film tends to significantly reduce the charge collection efficiency for recombination process, and the effective number of electron-hole pairs is lower than that of thin film, because it is difficult to fabricate high-dense and thick PbO films. In this paper, we first synthesized nano-sized PbO particles that could be used in a novel high-efficiency flat panel X-ray detector using a simple solution/combustion method. Energy dispersive X-ray spectrometry, X-ray diffraction, and field emission scanning electron microscopy were used to analyze the component ratio and morphology of the PbO particles as a function of annealing temperature. Then, 150-mm-thick PbO films were deposited on glass substrates using a particle-in-binder method at room temperature. The influences of annealing before deposition on the X-ray detection characteristics of the PbO films were investigated in detail. The key parameters-the dark current, X-ray sensitivity, signal-to-noise ratio, and signal decay-were measured. The annealing conditions strongly affected the electrical properties of the PbO films. The X-ray sensitivity of films annealed in oxygen gas increased dramatically with increasing annealing temperatures up to 500 C.

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Nowadays, large area, flat panel solid state detectors are being investigated for digital radiography. In this paper, development and evaluation of a selenium-based flat-panel digital xray detector are described. The prototype detector has a pixel pitch of 139μm and a total active imaging area of 7″×8.5″, giving a total of 1.9 million pixel. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500μm. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity of the response of exposure, the modulation transfer function(MTF) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was 4.16×106 ehp/pixel mR at the bias field of 10 V/μm: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%.

These In this paper, the evaluation of a seleniumbased flat-panel digital X-ray detector is described. The prototype detector has a pixel pitch of 139 ㎛ and a total active imaging area of 14 inches × 8.5 inches, making up a total of 3.9 million pixels. Several quantitative parameters have been devised that correlate with the abilities of imaging devices to perform clinical tasks. The concepts of MTF, NPS, and DQE have been well described and are very useful descriptors of resolution, noise, and signal-to-noise ratio transfer ability. Such parameters (sensitivity, leakage current, MTF, NPS, DQE) were examined to evaluate the performance of this system. The sensitivity of 4.82 nC/mR/cm 2 was measured at 10 V/㎛, while leakage current was measured at 270 pA/cm 2 . The measured MTF at 2 lp/mm was 40%, and the DQE at 1.5 lp/mm was 16%.

Large area, flat panel detectors are being investigated for digital radiogrpahy and fluoroscopy. Theses detectors employ an x-ray conversion layer of photoconductor to detect x-rays. The amorphous selenium layer that is currently being studied for its use as an x-ray photoconductor is not pure a-Se but rather a-Se doped with 0.2-0.5% As and 10-30 ppm Cl, also known as stabilized a-Se. The suitability of the stabilized a-Se is largely determined by its charge on generating, transporting and trapping properties.In this paper, a conventional time-of-flight measurement was carried out to analyze the transport properties of charge carriers. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of the stabilized a-Se with thickness of 400 μm. The photo response signals of the hole and electron were measured at the applied electric field of 10 V/μm as a function of time. The measured transit times of the hole and electron were about 229.17μs and about 8.73μs at 10 V/μm, respectively. The measured mobility indicated a slight dependence with respect to the applied electric field with a range of 4-10 V/μm. The experimental results showed that the measured mobility of the hole and electron was 0.04584 cm2V-1s-1 and 0.00174 cm2V-1s-1 at the electric field of 10 V/μm.