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Structures with a high-resistance thin sublayer between two oppositely directed potential barriers based on CdTe and the photoelectric and electrophysical processes taking place in these structures are investigated. It is shown that at the longitudinal illumination of the sample, the areas of the spatial charges of the oppositely directed barriers give an opposite contribution to the photoresponse of the structure, which results in a change in the sign of the spectral photocurrent. Due to the linear dependence of the inversion point λinv of the spectral photocurrent on the bias voltage, the investigated structures can be used for determining the wavelength of an unknown radiation.

A new universal principle of selective registration of electromagnetic radiation by means of silicon-based solid-state two-barrier structures is studied. In such structures, due to the interaction of oppositely directed photocurrents caused by potential barriers, it becomes possible to selectively register narrow spectral regions selected from the integral radiation flow, as well as to define the unknown length of a monochromatic wave. The influence of the base width and of outside-the-base areas of the two-barrier structure on photocurrent behaviour and on spectrophotometric properties of the photo-detector is studied.

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