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In silicon-substrate processing, it is frequently a requirement to create high-aspect-ratio anisotropic profiles. To do this Time Division Multiplexed processes are almost exclusively used. By alternating between a passivation step and an etching step, high-rate anisotropic profiles can be created. Each step is independent from one another, and to create the desired profiles, proper balancing of the individual steps is critical. Therefore characterization of each of these process steps is necessary. This study will characterize the steps used in a TDM process. Metrics for both deposition and etching are presented. Typical thin film measurement equipment is used; however in-situ optical emission interferometry (OEI) is also utilized to give real time measurements. We will show how process parameters can affect not only the rate, but also the uniformity of each step. By characterizing these steps individually we will show how it is possible to determine a balanced starting process for different applications.

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A continuous improvement study of the Gen III ICP MoSi etch process is accomplished through the use of high resolution factorial experimental design (DOE). The main goal of this work is to more fully characterize the process space within a commercial Gen III MoSi plasma etch process reactor. Particular emphasis is placed upon the improvement of CD bias loss as well as isolated/dense feature linearity within the same mask pattern. CD uniformity is also monitored as well as MoSi etch profile.Several novel etchant gases are explored prior to the Designed Experiment to characterize the effect of alternate chemistries on MoSi etch performance; these results are reported. The Designed Experiment was utilized to optimize the most promising alternate gas chemistry in terms of CD performance, MoSi Etch Rate uniformity and Selectivity to Quartz. The novel gases included a known polymerizing etch gas (CHF3) as well as etch rate enhancement gases (Cl2 & HBr) which have also historically been used within the silicon process industry to enhance selectivity to silicon dioxide and presumably, quartz.The fmal MoSi etch depth performance and phase shift enor correlation is described (see Figures below).