Internet of Things (IoT) specifies a transparent and coherent integration of assorted and composite nodes. Unification of these nodes with large resources and servers has brought advancement in technology for industrial and government services. The industrial IoT (IIoT), with smart nodes, enhance the development and manufacturing of industrial process, which is on demand now.However, the security concern is substantial, and it is required to control to perform prosperous assimilation of IIoT. Authentication of these smart nodes and establishing mutual trust among them is essential to keep vulnerabilities and potential risks out. Hence, this paper presents an efficient lightweight secure authentication protocol from the perspective of human-centered IIoT. This proposed scheme assumes a registration center which simply generates public and secret information for a node when it initially joins the network. Once registration is done, the registration center is not needed anymore, and advanced processes like mutual authentication, secure key exchange, and communications are independently done by nodes involved. Furthermore, we show that this scheme can reduce exponential computations and computational overhead and resolves various possible attacks.

Background: Increasing smartphone use among adolescents in todays' world has made this handy device an indispensable electronic tool, however, it comes at a price of problematic overuse or addiction. We aim to investigate the prevalence of smartphone addiction among undergraduate medical students and explore its association with various demographic and personal factors. Methods: A pool of 250 undergraduate students completed a survey composed of socio-demographics information, smartphone-use related variables and 10-point Smartphone Addiction Scale-Short Version in February 2019. Results: Smartphone addiction among medical students was estimated at around 36.8% with higher percentage of male smartphone addicts. Phubbing was reported by 37.6% participants with more than 60% reporting overuse. Statistically significant association was observed between smartphone addiction and gender and overuse. Self-acknowledgement of addiction was found to be the biggest predictor of smartphone addiction. Conclusion: This study provides preliminary insights into smartphone use, smartphone addiction and various factors predicting smartphone addiction among early undergraduate medical students from Nepal, which should be extended in future studies. Education policymakers and educators need to develop some strategies encouraging student's smartphone utilization to enhance academic performance.

Plasma-assisted atomic layer deposition ͑ALD͒ of Cu, via Cu II (tmhd) 2 (tmhd ϭ tetramethyl-3,5-heptanedionate) and an inductively coupled hydrogen plasma, is shown on metallic and dielectric surfaces. Nonselective deposition was achieved on SiO 2 , Au, and TaN x in a temperature range between 60 and 400°C. Deposition was self-limiting from ϳ90 to 250°C. A novel method to determine self-limiting behavior of the first half-reaction is presented; it is determined by pulsing the precursor once, for a long time, and the resulting growth is measured by Rutherford backscattering spectrometry. Further, saturation curves for plasmaassisted ALD of each half-reaction and as a function of purging time were also determined. In contrast, thermal ALD via Cu II (tmhd) 2 and H 2 was attempted and was very slow within the self-limiting temperature range. These experiments were undertaken on all the metallic and dielectric surfaces studied here including a plasma-assisted atomic layer deposited Cu seed.Cu has been accepted as the primary interconnect material for high-performance integrated circuits ͑ICs͒. To extend Cu for future gigascale IC applications, research continues on depositing conformal, uniform, and continuous Cu films into high aspect ratio features. 1 In the near future, the commonly accepted route for Cu deposition is intended to be ''long throw'' physical vapor deposition ͑PVD͒ such as an ionized metal PVD seed, followed by electrochemical deposition for trench/via fill. 2 If such an approach cannot be extended, there is a need to investigate alternative deposition processes. One promising method is to replace the PVD seed layer with atomic layer deposition ͑ALD͒. ALD is defined by the use of self-limiting chemical reactions to obtain layer-by-layer growth. 3 Typically, a metal ALD cycle is composed of four parts: (i) the first reactant or precursor is dosed on the substrate, followed by (ii) inert gas purging to remove excess precursor, (iii) a second reactant is delivered to the substrate to remove organic or inorganic ligands and reduce the metal to its elemental state, and finally (iv) an inert gas purging is performed to remove the excess second reactant. Steps (ii) and (iv) are necessary so that intermixing of the reactants does not take place resulting in parasitic chemical vapor deposition ͑CVD͒. The repetition of this procedure yields precise thickness control and conformal thin films. Many attempts at Cu ALD have been published including those on CuCl/Zn, 4 CuCl/H 2 , 5 selective Cu II (tmhd) 2 /H 2 (tmhd ϭ tetramethyl-3,5-heptanedionate) on noble metals, 6 the formation of a Cu oxide intermediate by Cu II (hfac) 2 (hfac ϭ 1,1,1,5,5,5-hexafluoroacetylacetonate) and H 2 O followed by reduction at each cycle, 7,8 Cu II (acetylacetone) 2 /H 2 , 9 and ALD using a Cu͑I͒acetamidinate compound with H 2 . 10 All the aforementioned works showed either some sort of selectivity or lack of self-limiting behavior. In particular for the Cu II (tmhd) 2 /H 2 process, a noble metal seed layer was necessary 11 but not rep...

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