(2016) Silicon carbide MOSFETs in more electric aircraft power converters: the performance and reliability benefits over silicon IGBTs for a specified flight mission profile. In: 18th European Conference on Power Electronics and Applications, 5-9 September 2016, Karlsruhe, Germany. Access from the University of Nottingham repository:http://eprints.nottingham.ac.uk/39658/1/Silicon%20carbide%20MOSFETs%20in%20more %20electric%20aircraft%20power%20converters%20The%20performance%20and %20reliability%20benefits%20over%20silicon%20IGBTs%20for%20a%20specified%20flight %20mission%20profile.pdf Copyright and reuse:The Nottingham ePrints service makes this work by researchers of the University of Nottingham available open access under the following conditions. This article is made available under the University of Nottingham End User licence and may be reused according to the conditions of the licence. For more details see: http://eprints.nottingham.ac.uk/end_user_agreement.pdf A note on versions:The version presented here may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the repository url above for details on accessing the published version and note that access may require a subscription. AbstractThis paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motor controlling an aileron are presented. The paper shows the calculated reliability figures for the power module in this application and an application-specific reliability test to verify 150,000 flight hours of module operation is introduced. Performance test results from a prototype unit are also presented.
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