Polarity is known to affect the growth and properties of ZnO single crystals and epitaxial films, but its effects are mostly unknown in ZnO nanorods. To leave polarity as the only varying parameter, ZnO nanorods are grown by chemical bath deposition under identical conditions and during the same run on O- and Zn-polar ZnO single crystals patterned by electron beam lithography with the same pattern consisting of 15 different domains. The resulting well-ordered O- and Zn-polar ZnO nanorod arrays with high structural uniformity are formed on all the domains. The comparison of their typical dimensions unambiguously reveals that Zn-polar ZnO nanorods have much higher growth rates than O-polar ZnO nanorods for all the hole diameter and period combinations. The distinct growth rates are explained in the framework of the surface reaction-/diffusive transport-limited elongation regime analysis, which yields a much larger surface reaction rate constant for Zn-polar ZnO nanorods. The origin of the difference is attributed to polarity-dependent dangling bond configurations at the top polar c-faces of ZnO nanorods, which may further be affected by polarity-dependent interactions with the ionic species in aqueous solution. These findings show the relevance of considering polarity as an important quantity in ZnO nanorods.

The ability to generate single photons is not only an ubiquitous tool for scientific exploration with applications ranging from spectroscopy and metrology 1,2 to quantum computing 3 , but also an important proof of the underlying quantum nature of a physical process 4 . In the microwave regime, emission of anti-bunched radiation has so far relied on coherent control of Josephson qubits 5-8 , where precisely calibrated microwave pulses are needed, and the achievable bandwidth is limited by the anharmonicity of the qubit. Here, we demonstrate the operation of a bright on-demand source of quantum microwave radiation capable of emitting anti-bunched photons based on inelastic Cooper pair tunneling and driven by a simple DC voltage bias. It is characterized by its normalized second order correlation function of g (2) (0) ≈ 0.43 corresponding to anti-bunching in the single photon regime. Our source can be triggered and its emission rate is tunable in situ exceeding rates obtained with current microwave single photon sources by more than one order of magnitude.