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Numerical simulations are used to analyze the performance of Si grating cells. The alternating direction implicit method is used to solve the two-dimensional diffusion equations. For a fixed grating geometry, the optimum junction depth is determined. The performance of the deep-junction grating cells is contrasted with that of the more common shallow-junction cells. The results show that the performance of the cells is enhanced both by incorporating a back-surface field and minority-carrier mirrors into the grating structure. T;8184.60.Jt, 73.40.−c