The orientation of cylinder-forming poly(styrene-block-methyl methacrylate) [P(S-b-MMA)] was investigated on two sets of polymeric surface treatments: 10 para-substituted polystyrene derivatives with <10 mol % poly(4-vinylbenzyl azide) and a series of poly(styrene-random-4-vinylbenzyl azide) [P(S-r-VBzAz)] copolymers with 5-100 mol % poly(4-vinylbenzyl azide). The copolymers were spin-coated to form thin films and then cross-linked by heating. The resulting films exhibited a range of surface tensions from 21 to 45 dyn/cm. Perpendicular orientation of P(S-b-MMA) cylinders was achieved with poly(p-bromostyrene) and all the [P(S-r-VBzAz)] copolymer surface treatments, most notably the homopolymer of poly(4-vinylbenzyl azide). Films made from these simple copolymers are as effective as random terpolymer alignment layers commonly made from both block monomers and a cross-linkable monomer.

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition−fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO 2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries.

The successful synthesis, characterization, and directed self‐assembly of a silicon‐containing block copolymer, poly(styrene‐block‐trimethylsilylisoprene) (P(S‐b‐TMSI)), which has much higher oxygen etch contrast than the de facto standard, poly(styrene‐block‐methyl methacrylate) is reported. A Sakurai, Grignard‐type coupling reaction provided the key monomer in good yield. Living anionic polymerization was employed to prepare the block copolymer, which has very low polydispersity. P(S‐b‐TMSI) was successfully ordered and oriented by directed self‐assembly. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013

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Substrate temperature effects on 193 nm photoresist deformation and self-aligned contact hole etching performances J.Plasma enhanced chemical vapor deposition Si-rich silicon oxynitride films for advanced self-aligned contact oxide etching in sub-0.25 μm ultralarge scale integration technology and beyondThe fabrication of electronic devices on flexible substrates represents an opportunity for the development of flexible display technologies, large area devices, and roll-to-roll manufacturing processes. Traditional photolithography encounters alignment and overlay limitations when applied to flexible substrates. One solution to the overlay challenges is imaging of two device layers in a single lithographic exposure. To enable the simultaneous patterning of two device layers, a new photoresist system was developed. Prior work on dual-tone photoresists introduced formulations capable of storing two independent images, but the reported systems are incompatible with the reactive ion etch processes commonly used today. This paper describes a dual-tone photoresist system that maintains the ability to store two independent latent images, distinguished by the incident exposure light wavelength, simultaneously remaining compatible with reactive ion etch image transfer processes.