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Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO 2 -doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H 2 /(Ar + H 2 ) flow ratios ( ) and substrate temperatures ( ). The optimal value for achieving high conducting TZO:H thin film decreased from 10% to 1% when increased from RT to 300 ∘ C. The lowest resistivity of 9.2 × 10 −4 Ω-cm was obtained as = 100 ∘ C and = 7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing . The average visible transmittance decreased with increasing for the RT-deposited film, while it had not considerably changed with different for the 300 ∘ C-deposited films. The optical bandgap increased as increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that = 100 ∘ C and = 7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications. Recently, the density functional theory proposed by van de Walle shows that hydrogen atoms can act as donors