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A distributed charge storage with Ni nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated in this study. The mean size and aerial density of the Ni nanocrystals are estimated to be about 5nm and 3.9×1012∕cm2, respectively. The nonvolatile memory device with Ni nanocrystals exhibits 1V threshold voltage shift under 4V write operation. The device has a long retention time with a small charge lose rate. Besides, the endurance of the memory device is not degraded up to 106 write/erase cycles.

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A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiO x layer structure, Zr:SiO x /porous SiO x structure outperforms from various aspects, including low operating voltages, tighter distributions of set voltage, higher stability of both low resistance state and high resistance state, and satisfactory endurance characteristics. Electric field simulation by COMSOL TM Multiphysics is applied, which corroborates that intensive electric field around the pore in porous SiO x layer guides the conduction of electrons. The constraint of conduction path leads to better stabilization and prominent performance of bilayer resistive switching devices. V