Performance and characteristics of double layer porous silicon oxide resistance random access memory

Abstract

A bilayer resistive switching memory device with an inserted porous silicon oxide layer is investigated in this letter. Compared with single Zr:SiO x layer structure, Zr:SiO x /porous SiO x structure outperforms from various aspects, including low operating voltages, tighter distributions of set voltage, higher stability of both low resistance state and high resistance state, and satisfactory endurance characteristics. Electric field simulation by COMSOL TM Multiphysics is applied, which corroborates that intensive electric field around the pore in porous SiO x layer guides the conduction of electrons. The constraint of conduction path leads to better stabilization and prominent performance of bilayer resistive switching devices. V

Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

“…The concentrated electric field in low-k material can lead to the restriction of conduction carriers. The phenomenon had been reported in many literature [15,16]. The concentrated electric field in the SiO 2 inserting layer could lead to the tight Ag conductive filament.…”

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

“…[8][9][10][11][12][13] Among numerous resistive switching materials, the silicon-based oxide thin films were intensively investigated for the applications in RRAM for portable electrical devices owing to its compatibility in integrated circuit (IC) processes and relative stability compared with metal oxide materials. [14][15][16][17][18][19][20][21][22][23][24][25][26] Filament formation and rupture is considered to be the reason of resistive switching in RRAM devices. [27][28][29] Thus, the filament shape and formation process affects the magnitude of working current, which in turn influences the power consumption of the device.…”

Effects of a Cu x O Buffer Layer on a SiO x -Based Memory Device in a Vaporless Environment

“…Depending on the material group [3], device structure [4, 5], and defect status [6, 7], various switching behaviors can be observed. The switching mechanisms are typically classified as either a valence change effect [8], a thermochemical effect [2, 9], or an electrochemical effect [10, 11], whereby distinct surface effects can be attributed to various mechanisms [12, 13].…”