2015
DOI: 10.1016/j.cap.2015.01.024
|View full text |Cite
|
Sign up to set email alerts
|

Performance improvement of amorphous indium–gallium–zinc oxide ReRAM with SiO2 inserting layer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
18
0

Year Published

2016
2016
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 25 publications
(18 citation statements)
references
References 17 publications
0
18
0
Order By: Relevance
“…The origin of the self-compliant phenomenon remains elusive, even if some authors tentatively explain it as caused by the formation of a thin oxide layer between the switching layer and the contact. 18,23…”
Section: Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The origin of the self-compliant phenomenon remains elusive, even if some authors tentatively explain it as caused by the formation of a thin oxide layer between the switching layer and the contact. 18,23…”
Section: Results and Discussionmentioning
confidence: 99%
“…17 SiO 2 has been used as a series resistance material to produce a thinner conductive filament. 18 These reports show the excellent resistive memory properties that can be obtained with sputter-deposited IGZO. This justifies the investigation of low-cost fabrication routes such as deposition from solution, because such methods typically lead to more defective materials with poorer electrical properties.…”
Section: Introductionmentioning
confidence: 87%
“…It is widely accepted that programable metallization on the nanoscale within the switching medium causes bistable properties. To better control the localization and the diameter of conducting filaments (CFs) and improve the resistive switching uniformity and stability, bilayer devices (based on chalcogenides or oxides) consisting of a switching layer and a buffer layer were proposed some years ago [ 2 , 3 ]. Note that oxide bilayers are well compatible with complementary metal-oxide-semiconductor (CMOS) technology.…”
Section: Introductionmentioning
confidence: 99%
“…According to the way the current increases, memristors can be roughly classified as digital or analog. The characteristic feature of a digital memristor is that resistive switching is abrupt, and it has been widely studied for its simple structure, easy three-dimensional stacking, and fast resistive switching speed [ 13 , 14 , 15 , 16 , 17 , 18 ]. For the last few years, analog memristors are typically characterized by gradual resistive switching, which has attracted more and more attention due to the application value of brain-like morphology calculations [ 19 , 20 ], programmable analog circuits [ 21 ], and the like.…”
Section: Introductionmentioning
confidence: 99%