Memristors Using Solution-Based IGZO Nanoparticles

Rosa, José; Santos, Lídia; Deuermeier, Jonas; Martins, Rodrigo; Gomes, Henrique L.; Fortunato, Elvira

doi:10.1021/acsomega.7b01167

Cited by 43 publications

(35 citation statements)

References 37 publications

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“…In terms of currents, the LRS was more reproducible than the HRS, Figure 2c, whereas the reset voltage showed a narrower distribution compared to the set voltages, Figure 2d. [32] The filamentary nature of the switching when the set was done in the reverse direction of the diode was confirmed by the unipolar characteristics given in Figure 3. [32] The filamentary nature of the switching when the set was done in the reverse direction of the diode was confirmed by the unipolar characteristics given in Figure 3.…”

Section: Resultsmentioning

confidence: 73%

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2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

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of less destructive switching events, since the device reliability is independent of the reproducibility of the filament formation. [6] Frequently, an analog switching is observed, which is applicable for neuromorphic systems. [7][8][9][10] Reports exist in the literature, which explore area-dependent switching involving the homogeneous migration of defects or ions through the thickness of the switching matrix. [11,12] This can be referred to as 3D RS. In a device with asymmetric electrodes, both 1D RS and 3D RS result in counter eightwise (c8w) switching loops, when the bias is applied to the current blocking electrode. [13] Another type of area-dependent RS exists when ions are exchanged (or trapping occurs at the interface) between the switching matrix and the electrode. If the current transport through this interface is modulated as a consequence of the ion exchange/trapping, then this can be referred to as 2D RS. The direction of the switching loops is opposite to 1D RS and 3D RS, that is, eightwise (8w) when the bias is applied to the current blocking electrode. Frequently, 2D volatile switching has been observed as a secondary process, affecting the high resistive state (HRS) of an otherwise 1D RS device. [14][15][16][17] In addition, the choice between digital and analog operation modes by different device initialization schemes has been reported for NiO-based devices. [18] However, the resistance window for the analog mode was below one order of magnitude and the mechanism was discussed as 3D RS.Both in 3D RS and 2D RS, the active interface represents a barrier to the current flow, for example, a Schottky junction. [19] In the case of Ti/Pr 0.7 Ca 0.3 MnO 3 (PCMO) devices the underlying mechanism is based on a redox reaction between the titanium oxide interlayer and the PCMO. [20,21] In oxide-based devices with a platinum Schottky barrier bottom electrode, electronic trapping at interface states was proposed as a mechanism. [15] To allow a sizeable data retention, structural stabilization of the trapped charge needs to occur. [22] To achieve a high ratio between HRS and low resistance state (LRS) in 3D and 2D RS, a highly mobile Fermi level, that is, a highly variable charge carrier concentration is desirable. In thin-film transistors (TFT), AOS are known to yield tremendously high on/off ratios. [23] Diodes of AOS have rectification ratios of 10 6 . [24] These applications show how the material is able to change from an insulator to a metallic conductor by A room-temperature-processed resistive switching Schottky diode that can be operated in two distinct modes, depending solely on the choice of device initialization mode, is presented. Electroforming in the diode's reverse polarity leads to an abrupt filamentary switching with inherently long data retention at the expense of rectification. After this electroforming process, the devices may work in either a bipolar or unipolar manner with a resistance window of at least two orders of magnitude. Device initialization in the forward direction shows a smoo...

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Section: Resultsmentioning

confidence: 73%

“…The reset current level scaled gradually with the set voltage range. [32] The absence of the oxygen-deficient Adv. The device initiation is also possible using current sweeps ( Figure S2c, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Branca

Deuermeier

Martins

et al. 2019

Adv Elect Materials

Self Cite

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show abstract

“…18 a) schematic illustration of a memristor device and b) representative IV characteristics for the memristor set and reset processes. Reproduced from Rosa et al 381 Memristors have also been considered as a route to achieve stable data storage, as demonstrated by Rosa et al 381 with solution processed a-IGZO, figure 18. Here conducting filaments were induced in the a-IGZO material during the writing phase, which were then disrupted during the reset phase.…”

Section: Data Storagementioning

confidence: 99%

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

2019

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“…The RS performance of these memories could be enhanced since the conical electrode concentrated the electric field at the sharp tip to localize the forming site of the conductive filament to tens of nanometers. Rosa et al introduced indium–gallium–zinc oxide nanoparticle (IGZOnp)‐based memristive device using solution process . The solution‐based deposition provides more defective film with low cost compared to a film deposited by vacuum process, which can be promising for the fabrication of RS memory.…”

Section: Inorganic Resistive Switching Memoriesmentioning

confidence: 99%

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

Sung

Kim

et al. 2019

Adv Materials Technologies

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The latest progresses in software engineering such as cloud computing, big data analysis, and machine learning have accelerated the emergence of advanced intelligent systems (AIS). However, the current computing system has significant challenges in dealing with unstructured data (e.g., image, voice, physiological signals) because the von‐Neumann bottleneck induces latency and power consumption issues. Neuromorphic computing, which imitates the behaviors of neuron and synapse within the biological neural network, is considered a promising solution beyond von‐Neumann architecture, since its collocated structure of processor and memory enables parallel processing of unstructured data with remarkable efficiency. Memristors are considered as next‐generation nonvolatile memory devices due to fast speed, low power, and excellent scalability. However, a low reliability and leakage current issues remain as obstacle to the commercialization of memristors. Memristive devices have been widely investigated as a strong candidate for artificial synapses since their resistance modulation characteristics under electrical stimulus are analogous to the plasticity of the brain synapse. Although emulation of synaptic behavior by single memristor cells is demonstrated by many researchers, the development of fully functional memristive neural network requires further investigations. This paper introduces the recent advances and developments in the field of inorganic‐based unconventional memristive devices for future AIS applications.

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Memristors Using Solution-Based IGZO Nanoparticles

Cited by 43 publications

References 37 publications

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes

Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status

Unconventional Inorganic‐Based Memristive Devices for Advanced Intelligent Systems

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