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Aluminum oxide ͑Al 2 O 3 ͒ thin films have been prepared by the atomic layer deposition ͑ALD͒ using trimethylaluminum ͑TMA͒ and ozone ͑O 3 ͒ as precursors. The process pressure was varied from 200 mTorr to 1000 mTorr at 320°C, and its effect on the film properties was compared to that of the deposition temperature change from 320°C to 460°C. The film growth rate and film properties of thickness uniformity, impurity incorporation, and the step coverage in high aspect ratio features were characterized. It was found that the deposition temperature decrease led to film property deterioration and film growth rate increase. Increasing process pressure at lower temperature could not only help to retrieve the film properties, but also further increase the film growth rate. These improvements can be attributed to the change of surface saturation level, the enhancement of precursor diffusion condition, as well as the higher probability for surface reactions to occur at the active sites. The electrical and reliability performances on the dynamic random access memory capacitor confirmed the robustness of the high-pressure films. This study suggests that increasing process pressure may reduce the necessary cycle time/number to obtain the qualified film properties and the desired film thickness, which brings advantages of throughput for ALD semiconductor applications.Aluminum oxide ͑Al 2 O 3 ͒ is one of the most extensively studied materials due to its relatively high dielectric constant, high thermal stability, and good adhesion to many surfaces. 1,2 These properties make Al 2 O 3 attractive in the silicon microelectronics and thin-film device industry as a high-k material. Al 2 O 3 has been used as a capacitor dielectric material for dynamic random access memories ͑DRAMs͒ 1 and considered to replace SiO 2 as the gate dielectric material for metal oxide semiconductor field effect transistors ͑MOSFETs͒. 3,4 Among numerous deposition technologies in depositing Al 2 O 3 dielectric films, atomic layer deposition ͑ALD͒ has recently gained acceptance as a thin-film deposition technique in semiconductor device manufacturing due to its excellent film property performance. 5-8 The ALD process relies on a self-limiting film growth process based on sequential saturative surface reactions that are accomplished by pulsing the gaseous precursors on the substrate alternately and purging the reactor with inert gases between the reactant pulses. In this way, the self-limiting reaction are forced to be entirely on the surface, which can ensure excellent conformality along with large area uniformity and digital thickness control by selecting the number of deposition cycles repeated.Saturation behavior of an ALD reactant depends on many factors, such as dosage, purge time, purge gas flow rate, deposition temperature, etc. The effect of changing ALD process parameters on the resulting film properties has been studied. 9,10 It was known that ALD processes are thermally activated; lowering deposition temperature degrades film uniformity and conform...

Aluminum oxide (Al 2 O 3 ) thin films have been prepared by the atomic layer deposition (ALD) using trimethylaluminum (TMA) and ozone (O 3 ) as precursors. The process pressure was varied from 200-1000 mTorr at lower deposition temperature of 320 o C and compared its effects on the properties with increasing deposition temperature to 460 o C. The film growth rate and the film properties of thickness uniformity, impurity incorporation and the step coverage in high aspect ratio features were characterized. It was found that the deposition temperature decrease leads to film property deterioration and film growth rate increase. Increasing process pressure at lower temperature can not only help to retrieve the film properties but further increase the film growth rate. These improvements can be attributed to the change of surface saturation level, the enhancement of precursor diffusion condition, as well as the higher probability for surface reactions to occur at the active sites. It suggests that increasing process pressure may reduce the necessary cycle times to obtain qualified film properties, which brings advantages of throughput for ALD semiconductor applications.

This paper discusses the failure analysis process of a DC failure using an in-FIB (Focused Ion Beam) nanoprobing technique with four probes and a scanning capacitance microscope (SCM) in advanced DRAM devices. Current-Voltage (I-V) curves measured by the nanoprobing technique indicate the curve of the failed device is different from that of the normal device. The failed device causes a high leakage current in the test. The cross-sectional 2-D doping profile of SCM verifies the region of the P-Well has shifted to create a leakage path that causes this failure.

Three techniques have been developed for TEM sample preparation to improve efficiency in terms of time reduction and success rate. The first technique is to closely control the thickness of a sample for a specific area to less than 10µm by mechanical polishing before undergoing FIB thinning. The second one is to repair cracks produced during mechanical polishing before further milling in the ion miller. The last one is to provide an in-FIB remedy for face-to-face cross-sectional samples, which peel from each other during mechanical polishing. These new techniques will substantially enhance the success rate and turnaround time for TEM sample preparation.