Secondary electron potential contrast (SEPC) technology with an in situ dynamic trigger was studied to inspect P+/N-well junction leakage arising from P-well misalignment in a static random access memory cell. Combining SEPC with scanning electron microscopy observations allows direct identification of the junction shift. Furthermore, an in situ negative bias applied to the P-well can create a wider depletion region and eliminate the leakage path in P+/N-well contacts, allowing the P+/N well to operate normally. This proposed in situ dynamic trigger method is a promising and effective approach to investigating device physics under a dynamic scope.

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