The growth and characterization of Cu(ln,Oa)Se, polycrystalline thin films under the presence of thin-MF (M=Na, K, Cs) precursor layers is presented. Some electrical, structural, and electronic absorber properties due to the presence of such Group la impurities are quantified along with their influence in device performance. We present a growth model for the role of Na in Cu(ln,Ga)Se, that attributes the enhancemeiits in electrical conductivity and photovoltaic device performance to the extinction of a finite number of donor states (i.e., I n , ) at the bulk and grain-boundary regions.

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