InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18Al0.82N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2Ga0.8N EBL. This indicates that an In0.18Al0.82N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.

Current understanding of phonons treats them as plane waves/quasi-particles of atomic vibration that propagate and scatter. The problem is that conceptually, when any level of disorder is introduced, whether compositional or structural, the character of vibrational modes in solids changes, yet nearly all theoretical treatments continue to assume phonons are still waves. For example, the phonon contributions to alloy thermal conductivity (TC) rely on this assumption and are most often computed from the virtual crystal approximation (VCA). Good agreement is obtained in some cases, but there are many instances where it fails-both quantitatively and qualitatively. Here, we show that the conventional theory and understanding of phonons requires revision, because the critical assumption that all phonons/normal modes resemble plane waves with well-defined velocities is no longer valid when disorder is introduced. Here we show, surprisingly, that the character of phonons changes dramatically within the first few percent of impurity concentration, beyond which phonons more closely resemble the modes found in amorphous materials. We then utilize a different theory that can treat modes with any character and experimentally confirm its new insights.

Data and analysis are presented for the study of efficiency droop in visible III-nitride light-emitting diodes (LEDs) considering the effects of both electron spill-over out of active region and hole injection into the active region. Performance characteristics of blue LEDs with lattice-matched In0.18Al0.82N electron-blocking layers (EBLs) with different thicknesses were measured in order to exclude the effects of strain and doping efficiency of the EBL, and the quantum efficiencies were analyzed taking account of the electron spill-over current and the relative hole concentration. The results suggest that the highest efficiency in LEDs with a 15-nm In0.18Al0.82N EBL is due to relatively lower hole-blocking effect, hence higher hole injection than in LEDs with a 20-nm EBL, while providing a higher potential barrier for reduced electron spill-over than in LEDs with thinner EBLs. This study suggests that the EBL hole-blocking and electron-confinement effects should be considered in order to achieve higher light output power and reduced efficiency droop at high currents.

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