A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline GeSbTe nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

Emerging photonic integrated circuit technologies require integrative functionality at ultrahigh speed and dimensional compatibility with ultrasmall electronics. Plasmonics offers a promise of addressing these challenges with novel nanophotonic approaches for on-chip information processing or sensing applications. Short communication range and strong light-matter interaction enabled by on-chip plasmonics allow us to extend beyond a conventional approach of integrating coherent and narrowband light source. Such hybrid electronic and photonic interconnection desires a on-chip photodetector that is highly responsive to broadband incoherent light, yet provides elegant design for nanoscale integration. Here we demonstrate an ultracompact broadband photodetection with greatly enhanced photoresponsivity using plasmonic nanoridge geometry. The nanoridge photodetector confines a wide spectrum of electromagnetic energy in a nanostructure through the excitation of multiple plasmons, which thus enables the detection of weak and broadband light. With nanoscale design, material, and dimensional compatibility for the integration, the nanoridge photodetector opens up a new possibility of highly sensitive on-chip photodetection for future integrated circuits and sensing applications.

Ectopic decidua (deciduosis) has been discovered in variable organs during pregnancy. Ovarian deciduosis, however, is a less frequent event during pregnancy. Ectopic decidua is a physiological phenomenon of pregnancy and arises from a progesteroneinduced metaplasia of subserosal stromal cells. As we experienced a case of 21 weeks gestation who was diagnosed with ovarian deciduosis that was suspicious for ovarian malignant tumor, we present it with a brief review of literature.

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