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To investigate the substrate current characteristics of a recessed channel structure with graded channel doping profile, we have fabricated and simulated the Inverted-Sidewall Recessed-Channel (ISRC) nMOSFET and compared it with a conventional planar nMOSFET. Experimentally, the ISRC nMOSFET shows about 30% reduction of substrate current, even though the drain current is almost the same. At 0.12-m channel length, the ISUB=IDS value of the conventional nMOSFET is measured to be 1.68 times higher than that of the ISRC nMOSFET. Also, using simulation, it is verified that the reduction of electric field at the drain junction of ISRC nMOSFET results from the graded channel doping profile, not from the recessed channel structure.

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In this paper, we present the high-frequency (HF) performance of coplanar nMOS transistors with a gate length of 0.1 pm. During device fabrication, several splits ffor the extension implantations have been chosen in order to investigate the DC and HF performance. In our experiment, it is shown that the DC characteristics of the devices with the lowest extension implantation dose give the best result in terms of the shortchannel effect, while the HF performance shows the optimum for the highest implantation dose. This shows that the sourcddrain junction architecture plays a key role in both digital and analog applications.