Because of outstanding optical properties and non‐vacuum solution processability of colloidal quantum dot (QD) semiconductors, many researchers have developed various light emitting diodes (LEDs) using QD materials. Until now, the Cd‐based QD‐LEDs have shown excellent properties, but the eco‐friendly QD semiconductors have attracted many attentions due to the environmental regulation. And, since there are many issues about the reliability of conventional QD‐LEDs with organic charge transport layers, a stable charge transport layer in various conditions must be developed for this reason. This study proposes the organic/inorganic hybrid QD‐LEDs with Cd‐free InP QDs as light emitting layer and inorganic ZrO2 nanoparticles as electron transport layer. The QD‐LED with bottom emission structure shows the luminescence of 530 cd m−2 and the current efficiency of 1 cd/A. To realize the transparent QD‐LED display, the two‐step sputtering process of indium zinc oxide (IZO) top electrode is applied to the devices and this study could fabricate the transparent QD‐LED device with the transmittance of more than 74% for whole device array. And when the IZO top electrode with high work‐function is applied to top transparent anode, the device could maintain the current efficiency within the driving voltage range without well‐known roll‐off phenomenon in QD‐LED devices.
We report efficient indium phosphide (InP) quantum dot-based light-emitting diodes (QD-LEDs). The current efficiency and the device stability of QD-LEDs were enhanced by increasing the thickness of ZnS outer shell of InP/ZnSe/ZnS multishell QDs. Reversible luminance degradation was observed in operation of QD-LEDs, which was hypothesized to result from QD charging. QDs having thicker ZnS shell with strong confinement suppressed the luminescence quenching as well as QD charging. Our findings about the reversible QD charging and the developed performance by the thick ZnS outer shell would help to rationalize the luminance quenching issue in QD-LED operation
The present work shows the inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO 3 /Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO 3 was used as a hole injection layer (HIL). In contrary to high annealing temperature (>200 °C) for conventional ZnO films, low temperature annealing (>150 °C) was performed for sol-gel derived ZnO film. The performance of the inverted QD-LEDs was efficiently improved by optimization of the annealing time and temperature of ZnO ETL. The current efficiency was significantly improved about 215% by lowering annealing temperature of ZnO ETL.
The present work shows the effect of ethanolamine surface treatment on inverted InP quantum dot light-emitting diodes (QD-LEDs) with inorganic metal oxide layers. In the inverted structure of ITO/ZnO/InP QDs/CBP/MoO3/Al, a sol-gel derived ZnO film was used as an electron transport layer (ETL) and MoO3 was used as a hole injection layer (HIL). First, ethanolamine was treated as a surface modifier on top of the ZnO electron transport layer. The optical performance of the QD-LED device was improved by the ethanolamine surface treatment. Second, low temperature annealing (<200°C) was performed on the ZnO sol-gel electron transport layer, followed by an investigation of the effect of the ZnO annealing temperature. The efficiency of the inverted QD-LEDs was significantly enhanced (more than 3-fold) by optimization of the ZnO annealing temperature
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