An apparatus and a method are described for plasma etching of the inner surface of superconducting radio frequency (SRF) cavities. Accelerator SRF cavities are formed into a variable-diameter cylindrical structure made of bulk niobium, for resonant generation of the particle accelerating field. The etch rate non-uniformity due to depletion of the radicals has been overcome by the simultaneous movement of the gas flow inlet and the inner electrode. An effective shape of the inner electrode to reduce the plasma asymmetry for the coaxial cylindrical rf plasma reactor is determined and implemented in the cavity processing method. The processing was accomplished by moving axially the inner electrode and the gas flow inlet in a step-wise way to establish segmented plasma columns. The test structure was a pillbox cavity made of steel of similar dimension to the standard SRF cavity. This was adopted to experimentally verify the plasma surface reaction on cylindrical structures with variable diameter using the segmented plasma generation approach. The pill box cavity is filled with niobium ring-and disk-type samples and the etch rate of these samples was measured.

Cylindrical capacitive discharge is a convenient medium for generating reactive ions to process inner walls superconductive radio-frequency (SRF) cavities. These cavities, used in particle accelerators, presents a three-dimensional structure made of bulk Niobium, with axial cylindrical symmetry. Manufactured cavity walls are covered with Niobium oxides and scattered particulates, which must be removed for desired SRF performance. Cylindrical capacitive discharge in a mixture of Ar and Cl2 is a sole and natural non-wet acid choice to purify the inner surfaces of SRF cavities by reactive ion etching. Coaxial cylindrical discharge is generated between a powered inner electrode and the grounded outer electrode, which is the cavity wall to be etched. Plasma sheath voltages were tailored to process the outer wall by providing an additional dc current to the inner electrode with the help of an external compensating dc power supply and corrugated design of the inner electrode. The dc bias potential difference is established between two electrodes to make the set-up favorable for SRF wall processing. To establish guidelines for reversing the asymmetry and establishing the optimal sheath voltage at the cavity wall, the dc self-bias potential and dc current dependence on process parameters, such as gas pressure, rf power and chlorine content in the Ar/Cl2 gas mixture was measured. The process is potentially applicable to all concave metallic surfaces.

Argon metastable and resonant level densities in Ar and Ar/Cl 2 discharges used for the processing of bulk niobium

No abstract

No abstract