In this work, we develop a field-effect transistor with a two-dimensional channel made of a single graphene layer to achieve label-free detection of DNA hybridization down to attomolar concentration, while being able to discriminate a single nucleotide polymorphism (SNP). The SNP-level target specificity is achieved by immobilization of probe DNA on the graphene surface through a pyrene-derivative heterobifunctional linker. Biorecognition events result in a positive gate voltage shift of the graphene charge neutrality point. The graphene transistor biosensor displays a sensitivity of 24 mV/dec with a detection limit of 25 aM: the lowest target DNA concentration for which the sensor can discriminate between a perfect-match target sequence and SNP-containing one.

Thin film solar cells based in Cu(In,Ga)Se2 (CIGS) are among the most efficient polycrystalline solar cells, surpassing CdTe and even polycrystalline silicon solar cells. For further developments, the CIGS technology has to start incorporating different solar cell architectures and strategies that allow for very low interface recombination. In this work, ultrathin 350 nm CIGS solar cells with a rear interface passivation strategy are studied and characterized. The rear passivation is achieved using an Al2O3 nanopatterned point structure. Using the cell results, photoluminescence measurements, and detailed optical simulations based on the experimental results, it is shown that by including the nanopatterned point contact structure, the interface defect concentration lowers, which ultimately leads to an increase of solar cell electrical performance mostly by increase of the open circuit voltage. Gains to the short circuit current are distributed between an increased rear optical reflection and also due to electrical effects. The approach of mixing several techniques allows us to make a discussion considering the different passivation gains, which has not been done in detail in previous works. A solar cell with a nanopatterned rear contact and a 350 nm thick CIGS absorber provides an average power conversion efficiency close to 10%.

One leading question for the application of graphene in nanoelectronics is how electronic properties depend on the size at the nanoscale. Direct observation of the quantized electronic states is central to conveying the relationship between electronic structures and local geometry. Scanning tunneling spectroscopy was used to measure differential conductance dI/dV patterns of nanometer-size graphene islands on an Ir(111) surface. Energy-resolved dI/dV maps clearly show a spatial modulation, indicating a modulated local density of states due to quantum confinement, which is unaffected by the edge configuration. We establish the energy dispersion relation with the quantized electron wave vector obtained from a Fourier analysis of dI/dV maps. The nanoislands preserve the Dirac Fermion properties with a reduced Fermi velocity.

Recently, Cu(In,Ga)Se 2 (CIGS) solar cells have achieved 21% world-record efficiency, partly due to the introduction of a postdeposition potassium treatment to improve the front interface of CIGS absorber layers. However, as high-efficiency CIGS solar cells essentially require long diffusion lengths, the highly recombinative rear of these devices also deserves attention. In this paper, an Al 2 O 3 rear surface passivation layer with nanosized local point contacts is studied to reduce recombination at the standard Mo/CIGS rear interface. First, passivation layers with well-controlled grids of nanosized point openings are established by use of electron beam lithography. Next, rear-passivated CIGS solar cells with 240-nm-thick absorber layers are fabricated as study devices. These cells show an increase in open-circuit voltage (+57 mV), short-circuit current (+3.8 mA/cm 2 ), and fill factor [9.5% (abs.)], compared with corresponding unpassivated reference cells, mainly due to improvements in rear surface passivation and rear internal reflection. Finally, solar cell capacitance simulator (SCAPS) modeling is used to calculate the effect of reduced back contact recombination on high-efficiency solar cells with standard absorber layer thickness. The modeling shows that up to 50-mV increase in open-circuit voltage is anticipated. Index Terms-Al 2 O 3 , Cu(In,Ga)Se 2 , electron beam lithography, local point contacts, nanosized openings, passivation layer, passivated emitter and rear cell (PERC), rear internal reflection, rear surface recombination velocity, Si. I. INTRODUCTIONO VER the past two years, CIGS solar cells have taken a sudden leap in world record efficiency of 1%, from around 20% to 21% [1]. Before 2013, CIGS solar cell efficiency improvements were mainly due to enhancements in absorber material quality, and cell efficiencies were lingering around 20% for a few years-as achieved by National Renewable Energy Laboratory (NREL) and the Centre for Solar Energy and Hydrogen Research Baden-Württemberg (ZSW) [2]. However, in Manuscript

Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. An optical lithography process that can produce sub‐micrometer contacts in a SiO2 passivation layer at the CIGS rear contact is developed in this work. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.