JUICE, the Jupiter Icy Moon Explorer, is a European Space Agency L-class mission destined for the Jovian system. Due for launch in 2022, it will begin a science phase after its transit to Jupiter that will include detailed investigations of three of the Galilean moons: Ganymede, Callisto and Europa. JUICE will carry payloads to characterise the Jovian environments, divided into in situ, geophysical and remote sensing packages.A key instrument in the remote sensing package is JANUS, an optical camera operating over a wavelength range of 350 nm to 1064 nm. JANUS will be used to study the external layers of Jupiter's atmosphere, the ring system and the planetary bodies. To achieve the science goals, resolutions of better than 5 m per pixel are required for the highest resolution observations during the 200 km altitude orbit of Ganymede, whilst the system is operated with a signal to noise ratio of better than 100.Jupiter's magnetic field is a dominant object in the solar system, trapping electrons and other charged particles leading to the radiation environment around Jupiter being very hostile, especially in the regions closest to Jupiter in the Ganymede orbit. The radiation tolerance of the focal plane detector in JANUS is therefore a major concern and radiation testing is vital to confirm its expected performance after irradiation will meet requirements set by the science goals.JANUS will be using a detector from e2v technologies plc, the CMOS Imaging Sensor 115 (CIS115), which is a device manufactured using 0.18 um Imaging CMOS Process with a 2000 by 1504 pixel array each 7 um square. The pixels have a 4T pinned photodiode pixel architecture, and the array is read out through four differential analogue outputs. This paper describes the preliminary characterisation of the CIS115, and results obtained with the CIS107 precursor sensor.

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The Open University's repository of research publications and other research outputs Development of a photon-counting near-fano-limited x-ray CMOS image sensor for THESEUS' SXI

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A monolithic CMOS image sensor based on the pinned photodiode (PPD) and optimized for X-ray imaging in the 300 eV to 5 keV energy range is described. Featuring 40 µm square pixels and 40 µm thick, high resistivity epitaxial silicon, the sensor is fully depleted by reverse substrate bias. Backside illumination (BSI) processing has been used to achieve high X-ray QE, and a dedicated pixel design has been developed for low image lag and high conversion gain. The sensor, called CIS221-X, is manufactured in a 180 nm CMOS process and has three different 512×128-pixel arrays on 40 µm pitch, as well as a 2048×512 array of 10 µm pixels. CIS221-X also features per-column 12-bit ADCs, digital readout via four highspeed LVDS outputs, and can be read out at 45 frames per second. CIS221-X achieves readout noise of 2.6 e-RMS and full width at half maximum (FWHM) at the Mn-Kα 5.9 keV characteristic X-ray line of 153 eV at -40 °C. This paper presents the characterization results of the first backside illuminated CIS221-X, including X-ray response and readout noise. The newly developed sensor and the technology underpinning it is intended for diverse applications, including Xray astronomy, synchrotron, and X-ray free electron laser light sources.