For sample-and-hold (S/H) circuits operating at low sampling rate and high temperature, the switch leakage current is one of the major error sources. A S/H circuit with dynamic switch leakage compensation is presented. The proposed leakage current compensation circuit generates switch leakage replicas that track the actual leakages in the sampling switches. A bidirectional current steering circuit allows the switch leakage to be dynamically compensated with the leakage replicas. A prototype S/H circuit is fabricated in a 1 µm silicon-onisolation CMOS technology. Measurement has shown the effectiveness of dynamic leakage current compensation up to 280°C with a maximum 75% leakage reduction.

This paper presents a temperature sensor operating over a wide temperature range from 25 °C to 225 °C for oil-well instrumentation applications. The temperature sensor is implemented with a simple time-domain architecture and a mapping function at the digital back-end. The mapping function eliminates the need for a bandgap reference (BGR), whose temperature coefficient (TC) deteriorates the accuracy especially for high and wide temperature range of operation. The timedomain implementation results in low power consumption and chip area. With digital calibration at room temperature using an FPGA, the sensor achieves a worst-case inaccuracy of +1.6 °C/-1.5 °C and consumes only 20-µA current under a 4.5-V supply. The chip is fabricated with a commercial PD-SOI CMOS process and occupies a chip area of 0.41 mm 2 .

This paper describes a bandgap reference with temperature range up to 300°C. Fabricated in a PDSOI CMOS technology, the bandgap reference achieves a box model temperature coefficient of 138ppm from 25 to 300°C, and line regulation less than 1.5mv/V. The minimum operating voltage is 2V and consumes merely 285μW at room temperature over several samples.

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