Uniform and small-diameter single-walled carbon nanotubes (SWNTs) have been produced using identical molecular nanoclusters containing Fe and Mo atoms with a defined molecular formula and a specific structure as catalysts in a chemical vapor deposition method. The average diameter of the SWNTs produced in these experiments is 1.0 nm with a standard deviation for the diameter distribution of 17%. The diameters of SWNTs were obtained by atomic force microscopy and Raman spectroscopy.

Transition films from amorphous (a-) to microcrystalline (μc-) silicon were prepared by hot-wire chemical vapor deposition using silane decomposition with either varied hydrogen-to-silane ratio, R, or with fixed R=3 but a varied substrate temperature, Ts. Raman results indicate that there is a threshold for the structural transition from a- to μc-Si:H in both cases. The onset of the structural transition is found to be R≈2 at Ts=250 °C and Ts≈200 °C at R=3. The properties of the material were studied by infrared absorption, optical absorption, photoluminescence (PL), and conductivity temperature dependence. We observed that the peak frequency of the SiH wag mode remains at 630−640 cm−1 for all the films, but the hydrogen content shows two regimes of fast and slow decreases separated by the onset of microcrystallinity. When microcrystallinity increased, we observed that (a) the SiO vibration absorption at 750 cm−1 and 1050−1200 cm−1 appeared, (b) the relative intensity of the 2090 cm−1 absorption increased, (c) the low-energy optical absorption at photon energy <1.4 eV increased one to two orders of magnitude, (d) the low-energy PL band at ∼1.0 eV emerged with a decrease of total PL intensity, and (e) the conductivity activation energy decreased. The aforementioned changes correlated well with the crystallinity of the material. We attribute the observations mainly to the formation of the c-Si gain boundaries during crystallization.

We have studied the effect of texture in Ag/ZnO back reflectors (BRs) on the performance of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells. While a larger texture provides superior light trapping, it also deteriorates the nc-Si:H quality. We have used total and diffused reflection and atomic force microscopy to evaluate the BR texture. A BR with textured Ag and thin ZnO layers has been found to give the best cell performance. Using the optimized BR, we have achieved an initial active-area efficiency of 10.2% in a nc-Si:H single-junction cell and a stable total-area efficiency of 12.5% in a hydrogenated amorphous silicon/nc-Si:H/nc-Si:H triple-junction cell.

Light-induced metastability in hydrogenated nanocrystalline silicon (nc-Si:H) single-junction solar cells has been studied under different light spectra. The nc-Si:H studied contains a certain fraction of hydrogenated amorphous silicon (a-Si:H). We observe no light-induced degradation when the photon energy used is lower than the bandgap of a-Si:H, while degradation occurs when the photon energy is higher than the bandgap. We conclude that the light-induced defect generation occurs mainly in the amorphous phase. Light soaking experiments on a-Si:H∕a-SiGe:H∕nc-Si:H triple-junction solar cells show no light-induced degradation in the bottom cell, because the a-Si:H top and a a-SiGe:H middle cells absorb most of the high-energy photons.