The Ga-doped ZnO thin films (GZO) were deposited at room temperature by DC magnetron reactive sputtering. The influence of vacuum annealing temperature on the morphology, internal stress, optical and electrical properties were investigated. The results showed that with the rise of annealing temperature, the grain size increased, the preferred orientation and crystallization degree became better, the internal stress reduced, the resistivity firstly decreased slightly before 350°C and then increased sharply. The minimum resistivity of 1.32×10-3Ω•cm was obtained at 350°C. The annealing temperature had a very big influence on the transmittance, and the average transmittance was about 80% in the visible range.

The Ga-doped ZnO (GZO) films were prepared by DC magnetron sputtering at different substrate temperature, followed by etching in 0.5%HCL solution for 15s to obtain textured surface. Optical and electrical properties, structural and surface morphology of thin films were investigated. The results indicated that the transmittance rate decreased and the C-axis preferred orientation of films enhanced with the increase of the substrate temperature. When temperature increased from room time (RT) to 200°C, the resistivity decreased and the quality crystal became better, while substrate temperature above 250°C, the resistivity increased,the deterioration of crystallinity emerged. For the textured film deposited at 200°C, it obtained the minimum resistivity of 0.84×10-3/(Ω•cm) and had a good light trapping ability.