The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance. However, the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface, which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances. The corresponding power conversion efficiency of this optimized device reached 10.78%. (The control device was 9.56%.) Therefore, this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands, which is also compatible with other CQD-based optoelectronic devices.

HgTe colloidal quantum dots (CQDs) are promising absorber systems for infrared detection due to their widely tunable photoresponse in all infrared regions. Up to now, the best-performing HgTe CQD photodetectors have relied on using aggregated CQDs, limiting the device design, uniformity and performance. Herein, we report a ligand-engineered approach that produces well-separated HgTe CQDs. The present strategy first employs strong-binding alkyl thioalcohol ligands to enable the synthesis of well-dispersed HgTe cores, followed by a second growth process and a final postligand modification step enhancing their colloidal stability. We demonstrate highly monodisperse HgTe CQDs in a wide size range, from 4.2 to 15.0 nm with sharp excitonic absorption fully covering short- and midwave infrared regions, together with a record electron mobility of up to 18.4 cm2 V–1 s–1. The photodetectors show a room-temperature detectivity of 3.9 × 1011 jones at a 1.7 μm cutoff absorption edge.

Solution-processed semiconductors have opened promising avenues for next-generation semiconductor and optoelectronic industries. Colloidal quantum dots (QDs) as one of the most typical materials are widely utilized for the design and development of light-emitting diodes, photodetectors, and solar cells. Recently, an emerging process of PbS QD ink has been employed to attain world record power conversion efficiency by surface passivation using a PbI 2 ligand to form PbI 2 −PbS and the process optimization in the field of photovoltaics. However, the bonding and debonding of the ligands on the surface of PbS QDs are dynamic reversible processes in an ink environment. The uncoordinated Pb 2+ defects induced by unbonded PbS QDs serve as the recombination sites. Thus, the present ink process leaves much room for the enhancement by surface passivation of PbS QDs. Herein, we devise an efficient strategy with a supplementary phenethylammonium iodide (PEAI) ligand for the formation of the PEAI−PbS interface in PbS QD ink-processed solar cells. This newly developed method can not only improve the passivation on the QD surface by iodine ions but also simultaneously enhance the carrier collection efficiency by a graded energy alignment between PbI 2 −PbS and PEAI−PbS layers. The corresponding power conversion efficiency of the optimized device has significantly increased by approximately 20% more than the control device. As a result, such a robust and efficient method regarded as a strategic candidate can overcome the bottleneck of imperfect passivation caused by a large specific surface area and loose bonding ligands, eventually promoting the industrial application of QDs.