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This paper proposes the light-induced dielectrophoresis (DEP) biochip prepared by 40.68-MHz very high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) and post-microwave annealing treatment. The biochip can screen circulating tumor cells without using any antibodies and biomarkers. Therefore, the biochip's high efficiency and high purity are goals for effectively conducting the whole genome sequencing (WGS) analysis. The quality, uniformity, and electrical properties of the prepared silicon thin films affect the performance parameters of the biochip. High-quality nanocrystalline silicon (nc-Si:H) thin film is the core technology in the biochip. High-density nc-Si:H thin films can be well prepared using 40.68 MHz VHFPECVD and post-treatment microwave annealing. Microwave annealing improves the crystallinity and reduces the defects in the nc-Si:H thin films discovered by Fourier-transform infrared spectroscopy (FTIR). The prepared thin film with a crystallinity of 5% enhanced 38.3%, surface roughness of 10.93 nm, and a photo/dark current of 7.1×10 3 with a power density of 60mW/cm 2 was obtained. The biochip showed a recovery rate of 81.3%, purity of 78.6%, and survival rate of 91% for applying to the circulating tumor cells (CTCs).INDEX TERMS LIDEP biochip, Light-induced dielectrophoresis, Nano-crystallite silicon thin film.

This paper proposes the effects of chamber pressures on the passivation layer of hydrogenated nano-crystalline silicon (nc-Si:H) mixed-phase thin film using microwave annealing (MWA) to achieve a high-quality thin film. The use of 40.68 MHz very-high-frequency plasma-enhanced chemical vapor deposition (VHFPECVD) deposited the nc-Si:H mixed-phase thin film on the top and bottom of the n-type crystalline silicon substrate. The chamber pressures (0.2, 0.4, 0.6, and 0.8 Torr) of the VHFPECVD were critical factors in controlling the carrier lifetime of the symmetric structure. By using the VHFPECVD to deposit the nc-Si:H and using the MWA to enhance the quality of the symmetric structure, the deposited nc-Si:H’s properties of a crystalline volume fraction of 29.6%, an optical bandgap of 1.744 eV, and a carrier lifetime of 2942.36 μs were well achieved, and could be valuable in thin-film solar-cell applications.

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