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Radiative recombination of two-dimensional electron gas (2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface. V

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates Electrical and optical studies of metal organic chemical vapor deposition grown N-doped ZnO films Correlation between exciton-phonon interaction and electrical conductivity for unintentionally-doped ZnO epilayers grown by metal-organic chemical vapor deposition J. Appl. Phys.In this study, the authors investigate the evolution of the structural and electrical properties of ZnO epilayers grown by the metal-organic chemical vapor deposition method on c-sapphire substrates. The inserting of a low-temperature ZnO buffer layer not only significantly improves the structural quality of the high-temperature ͑HT͒-grown ZnO epilayer on a sapphire substrate but also results in high background electron concentration in it from the Hall-effect measurement. After subtracting the conductive contribution from a thin degenerated layer mostly formed between the buffer layer and the substrate based on the two-layer model, the deduced electron-carrier concentration is still in the order of 10 18 cm −3 , which is much larger than the 10 16 cm −3 obtained from capacitance-voltage measurement near the top surface. This indicates that a much thicker layer with high carrier concentration should be formed in the HT-grown ZnO epilayer, which is significantly different from that observed in GaN epitaxy, where only a thin degenerated interfacial layer is suggested to form in the GaN buffer layer. Al atoms' distribution acquired from secondary-ion mass spectrometry shows a strong dependence on the temperature of the ZnO growth process, indicating that a thermally enhanced diffusion mechanism should be responsible for the observation of the enhanced Al atom concentration in the HT-grown ZnO epilayer. As substituted Al atoms on the Zn site act as donors in ZnO, the one-to-one correspondence between Al content and the carrier concentration, as well as the analysis of temperature-dependent Hall-effect measurement, indicates that diffusion-induced gradient-distributed Al Zn shallow donors should be the main origin of the high background-carrier concentration in the HT-grown ZnO epilayers.

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