There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6.
In the polarimetric synthetic aperture radar (PolSAR) system, crosstalk error is the key parameter for polarimetric imaging. The source of crosstalk is mostly from the cross-polarization level of the SAR antenna subsystem. To meet the requirements of PolSAR observing modes, a low cross-polarization level under −35 dB is realized for the SAR antenna of the GF-3 satellite. In this paper, we will describe the principles and methods for implementation of low cross-polarization level. The two polarized RF chains are totally independent to ensure high isolation, and a dual-polarized waveguide slot antenna subarray is designed with a low cross-polarization level. Besides, the low taper efficiency of the cross-polarization pattern contributes to reduce the cross-polarization, showing the advantage of the phased array antenna in the PolSAR system. The paper also displays the measured results of cross-polarization for the GF-3 SAR antenna. The study gains a better understanding of the cross-polarization pattern for phased array antenna. The methods utilized here can be extended to other polarimetric SAR systems.
GF-3 is the first C-band multipolarization synthetic aperture radar (SAR) satellite in China. The SAR system is equipped with an active phased array antenna to electronically generate various antenna beams. The accuracy of SAR antenna patterns is of main importance for precise SAR image processing. The traditional method for antenna pattern measurement is the near-field method but it is unable to satisfy the demand for fast measuring in-orbit. In order to measure the SAR antenna pattern quickly with high accuracy, we propose the internal calibration method. The internal calibration uses calibration signals which are routed along the nominal signal path in SAR systems, thus monitoring the gain and phase variations for each T/R channel is possible. This paper will focus on this method, including its principle, operation steps, and results, compared to the near-field method. The internal calibration method provides a valuable solution for SAR antenna pattern measurement.
We have studied the carrier densitiesnof multilayer and monolayer epitaxial graphene devices over a wide range of temperaturesT. It is found that, in the high temperature regime (typicallyT≥ 200 K),ln(n)shows a linear dependence of 1/T, showing activated behavior. Such results yield activation energiesΔEfor charge trapping in epitaxial graphene ranging from 196 meV to 34 meV. We find thatΔEdecreases with increasing mobility. Vacuum annealing experiments suggest that both adsorbates on EG and the SiC/graphene interface play a role in charge trapping in EG devices.
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