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In this work, we deposit the chalcopyrite semiconductor CuInxGa1-xSe2 (CIGS) thin films using a three-stage co-evaporation process below 450 °C. It is observed that when the soda-lime glass substrate is replaced by polyimide, the conversion efficiency of this CIGS device changes from 11.12% down to 9.1%, and this efficiency decrease results mainly from the different open-circuit voltage (Voc). Temperature-dependent current–voltage measurements are carried out, from which the activation energy is extracted; furthermore, the dominant recombination mechanisms as well as paths are determined, and finally the reason for the different Voc is analyzed.

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The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 (CIS) films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu(In,Ga)Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.

Li( ) * * , HE Qing( ), JIANG Wei-long( ), LIU Fang-fang( ), LI Chang-Jian( ), SUN Yun( )