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A 3C-SiC/NiO p–n heterojunction photoanode exhibits a substantially improved photoelectrochemical water-splitting performance in terms of photocurrent, onset potential and fill-factor.

Self-powered photodetectors working in solar-blind region (below 280 nm) have attracted growing attention due to their wide applicability. Monoclinic Ga 2 O 3 (β-Ga 2 O 3) with excellent merits and a wide bandgap (4.9 eV) is regarded as a good candidate for solar-blind photodetector application. Self-powered photodetectors generally based on homo/heterojunction suffer from a complex fabrication process and slow photoresponse because of the interface defects and traps. Herein, we demonstrated a fabrication and characterization of a self-powered metal-semiconductor-metal (MSM) deep-ultraviolet (DUV) photodetector based on single crystal β-Ga 2 O 3. The self-powered property was realized through a simple one-step deposition of an asymmetrical pair of Schottky interdigital contacts. The photocurrent and responsivity increase with the degenerating symmetrical contact. For the device with the most asymmetric interdigital contacts operated at 0 V bias, the maximum photocurrent reaches 2.7 nA. The responsivity R λ , external quantum efficiency EQE, detectivity D*, and linear dynamic range LDR are 1.28 mA/W, 0.63, 1.77 × 10 11 Jones, and 23.5 dB, respectively. The device exhibits excellent repeatability and stability at the same time. Besides, the device presents a fast response speed with a rise time of 0.03 s and a decay time of 0.08 s. All these results indicate a promising and simple method to fabricate a zeropowered DUV photodetector.