No abstract

Semiconductor oxide-sensitive materials can be divided into n-type materials and p-type materials according to this characteristic. The carriers in n-type materials are mainly electrons, which are formed by the existence of a large number of oxygen vacancies in the material’s crystal lattice. Common n-type materials include SnO2, In2O3, and ZnO. This article is aimed at studying the effect of SnO2-based composite gas-sensitive materials on the treatment process of volatile organic compounds. In this paper, the biomembrane method, the ultrafiltration membrane transmembrane pressure difference method, and the chemical reaction activity analysis method in the membrane treatment detection method are proposed, and then, the empirical kinetic model for the preparation of SnO2-based composite gas-sensitive materials is established, and the TPU nanometer is analyzed. The cross-sectional scanning of the composite material explored the effect of the curing agent content on the SnO2-based composite gas-sensitive material and analyzed the mechanical properties of the material. The experiment in this article uses 15 orders of magnitude of mechanics, which improves the scientific nature of the article. The experimental results show that the material modification has a better improvement effect on the film treatment process of volatile organic compounds.